Infineon IPD050N03LGATMA1 OptiMOS 5 30V Power MOSFET for High-Efficiency Power Conversion

The relentless pursuit of higher efficiency and power density in modern electronic systems places immense demands on power semiconductor technology. Addressing this need, the Infineon IPD050N03LGATMA1, a member of the advanced OptiMOS™ 5 30V family, stands out as a premier solution for a wide array of power conversion applications. This Power MOSFET is engineered to deliver exceptional performance, enabling designers to create more compact, cooler-running, and highly efficient products.

A cornerstone of this device's superiority is its extremely low figure-of-merit (R DS(on) Q G). With a maximum R DS(on) of just 0.5 mΩ at V GS = 10 V, it minimizes conduction losses significantly. This allows for more current to be handled in a smaller footprint without excessive heating, which is crucial for space-constrained designs. Furthermore, the low gate charge (Q G) ensures swift switching transitions, drastically reducing switching losses—a critical factor in high-frequency operations common in modern switch-mode power supplies (SMPS), DC-DC converters, and motor drive circuits.

The benefits of these technical achievements are directly realized in end-applications. Designers can achieve peak efficiency levels above 98% in synchronous rectification stages of server and telecom power supplies. In automotive systems, such as electric power steering (EPS) and 48V mild-hybrid systems, this MOSFET contributes to lower electromagnetic emissions and improved fuel economy. Its robust construction and high avalanche ruggedness also ensure superior reliability under harsh operating conditions.

Packaged in the space-efficient SuperSO8, the IPD050N03LGATMA1 offers an excellent thermal performance-to-size ratio. This package is designed for effective heat dissipation, allowing for higher continuous current (I D) handling—up to 240 A—without necessitating large heatsinks. This makes it an ideal candidate for pushing the boundaries of power density.

In summary, the Infineon OptiMOS™ 5 technology embodied in the IPD050N03LGATMA1 provides a compelling blend of the lowest losses, high robustness, and superior packaging, setting a new benchmark for power conversion efficiency.

ICGOOODFIND: The Infineon IPD050N03LGATMA1 is a top-tier 30V MOSFET that sets a high standard for efficiency and power density in modern power management, making it an optimal choice for demanding automotive, industrial, and computing applications.

Keywords: Power MOSFET, High Efficiency, OptiMOS 5, Low R DS(on), Synchronous Rectification.