Infineon IPA50R190CEXKSA2 650V CoolMOS™ Power Transistor: Datasheet, Features, and Application Notes

The Infineon IPA50R190CEXKSA2 is a state-of-the-art 650V superjunction MOSFET belonging to the renowned CoolMOS™ CE family. Designed for high efficiency and robustness, this power transistor is engineered to meet the demanding requirements of modern switched-mode power supplies (SMPS), industrial drives, and renewable energy systems.

Key Features and Benefits

At the core of this MOSFET's performance is its superjunction (SJ) technology, which sets a new benchmark for low on-state resistance ($R_{DS(on)}$) and exceptional switching efficiency. With an $R_{DS(on)}$ of just 190 mΩ at a gate-source voltage of 10 V, it significantly reduces conduction losses. This allows for higher power density designs and improved thermal management, as less energy is wasted as heat.

The device boasts a high repetitive avalanche ruggedness, ensuring reliable operation under extreme conditions, such as voltage overshoots during switching. Furthermore, it features a very low effective output capacitance ($C_{oss}$) and superior gate charge ($Q_g$) characteristics. This combination is critical for achieving high switching frequencies, which in turn enables the use of smaller passive components like inductors and transformers.

Another standout trait is its integrated fast body diode. This feature enhances the MOSFET's reliability in hard-switching and bridge topologies by improving reverse recovery behavior, reducing switching losses, and minimizing electromagnetic interference (EMI).

Datasheet Overview

The datasheet for the IPA50R190CEXKSA2 provides essential information for design engineers. Key specifications include:

Drain-Source Voltage ($V_{DS}$): 650 V

Continuous Drain Current ($I_D$): 11.3 A (at $T_C = 100°C$)

On-Resistance ($R_{DS(on)}$): Max. 190 mΩ (@ $V_{GS} = 10 V$, $I_D = 5.7 A$)

Gate Threshold Voltage ($V_{GS(th)}$): 3.5 V (typical)

Total Gate Charge ($Q_g$): 28 nC (typical)

Package: TO-220-3 FullPAK (isolated), which offers easy mounting and excellent creepage distance.

Application Notes

The IPA50R190CEXKSA2 is ideally suited for a wide range of high-performance applications. Its primary use is in power factor correction (PFC) stages and LLC resonant converters found in server and telecom power supplies. Its fast switching capabilities and high voltage rating also make it an excellent choice for photovoltaic inverter systems and industrial motor drives.

When designing with this MOSFET, careful attention must be paid to:

Gate Driving: A dedicated gate driver IC with sufficient drive current is recommended to quickly charge and discharge the input capacitance, minimizing switching times.

PCB Layout: To minimize parasitic inductance in high-current loops, a tight and symmetrical layout is crucial. This helps prevent voltage spikes and ensures stable operation.

Thermal Management: Despite its high efficiency, proper heatsinking is necessary to maintain the junction temperature within safe limits, ensuring long-term reliability.

ICGOOODFIND

ICGOOODFIND: The Infineon IPA50R190CEXKSA2 CoolMOS™ CE represents a pinnacle of high-voltage MOSFET technology, delivering an optimal balance of ultra-low $R_{DS(on)}$, fast switching speed, and proven robustness. It is an indispensable component for engineers striving to push the boundaries of efficiency and power density in next-generation power conversion systems.

Keywords:

CoolMOS™ CE

Superjunction MOSFET

Low $R_{DS(on)}$

Fast Switching

Avalanche Ruggedness