Infineon IKP20N65H5: A 650V Superjunction MOSFET for High-Efficiency Power Conversion

The relentless pursuit of higher efficiency and power density in modern electronic systems places immense demands on power semiconductor technology. At the heart of many advanced switched-mode power supplies (SMPS), industrial drives, and renewable energy inverters lies the power MOSFET. The Infineon IKP20N65H5 represents a significant evolution in this field, leveraging state-of-the-art superjunction (SJ) technology to set a new benchmark for performance in 650V applications.

Engineered using Infineon's proprietary CoolMOS™ H5 technology, this MOSFET is designed to achieve an exceptional balance between low switching losses and superior conduction performance. The superjunction structure is key to this advancement, enabling a drastic reduction in on-state resistance (RDS(on)) for a given silicon area. The IKP20N65H5 boasts a maximum RDS(on) of just 0.20 Ω at 25°C, which directly translates to lower conduction losses and improved thermal management. This allows designers to either maximize the efficiency of their systems or reduce the size of heat sinks and overall form factors.

A critical challenge in high-voltage switching is the trade-off between switching speed and electromagnetic interference (EMI). The H5 series addresses this with optimized dynamic characteristics. It features very low gate charge (QG) and reduced internal capacitances (Ciss, Coss, Crss), which facilitate faster switching transitions and lower switching losses. This is particularly beneficial for high-frequency operation, enabling the use of smaller magnetic components. Furthermore, the technology ensures a soft recovery body diode, which minimizes voltage overshoots and ringing, thereby reducing stress on the component and simplifying EMI filtering design.

Beyond raw performance, the device is built for robustness and reliability. It offers a wide avalanche energy rating and is qualified for industrial-grade applications, ensuring stable operation under harsh conditions. The high-voltage rating of 650V provides a sufficient safety margin for operation in universal mains applications (85 VAC – 305 VAC), making it an ideal choice for power supplies targeting the global market.

ICGOOODFIND: The Infineon IKP20N65H5 stands out as a premier 650V superjunction MOSFET that effectively bridges the gap between high efficiency and high power density. Its exceptional combination of ultra-low on-resistance, minimized switching losses, and enhanced ruggedness makes it a superior choice for designers aiming to push the boundaries of performance in server & telecom SMPS, photovoltaic inverters, and high-performance lighting systems.

Keywords:

Superjunction MOSFET

High-Efficiency

Low RDS(on)

CoolMOS™ H5

Fast Switching