Infineon IFX25001TFV50ATMA1: A 50V High-Current Power MOSFET Engineered for Demanding Automotive and Industrial Applications

In the rapidly evolving landscape of power electronics, the demand for robust, efficient, and reliable switching components is paramount. The Infineon IFX25001TFV50ATMA1 stands out as a premier solution, specifically engineered to meet the rigorous requirements of both automotive and industrial applications. This 50V N-channel power MOSFET sets a new benchmark for performance in high-current scenarios.

At the heart of this device's capability is its exceptionally low typical on-state resistance (RDS(on)) of just 0.25 mΩ. This ultra-low resistance is a critical figure of merit, as it directly translates to minimized conduction losses. When switching high currents, this results in significantly reduced power dissipation, leading to higher overall system efficiency and less thermal stress. For applications like electric power steering (EPS), braking systems, and engine management modules, this efficiency is crucial for reliability and performance. Similarly, in industrial settings such as motor drives, power supplies, and robotic control, it ensures cooler operation and greater energy savings.

The component is housed in a SuperSO8 package (PG-TSDSO-14), which offers an optimal balance between a compact footprint and superior thermal and electrical performance. This package is designed for effective heat dissipation, allowing the MOSFET to handle high continuous drain currents (Id) up to 720A in pulsed operation, making it ideal for handling high inrush currents commonly encountered in motor start-ups or solenoid actuation.

A key differentiator for the IFX25001TFV50ATMA1 is its AEC-Q101 qualification, certifying its suitability for the challenging automotive environment. It is built to withstand high temperatures, voltage spikes, and other harsh conditions prevalent under the hood. This ruggedness, combined with its high current-handling capability, also makes it a perfect fit for heavy-duty industrial machinery, where operational longevity and minimal downtime are critical.

Furthermore, the MOSFET features low gate charge (Qg), which simplifies drive circuit design and enables faster switching speeds. This is essential for high-frequency applications, helping to reduce switching losses and improve the overall dynamic response of the system.

ICGOOODFIND: The Infineon IFX25001TFV50ATMA1 is a top-tier 50V power MOSFET that excels in delivering high current with minimal losses. Its unparalleled combination of ultra-low RDS(on), robust automotive-grade qualification, and excellent thermal performance in a compact package makes it an indispensable component for designers aiming to push the boundaries of efficiency and reliability in next-generation automotive and industrial systems.

Keywords: Power MOSFET, Automotive Grade, Low RDS(on), High-Current Switching, Thermal Performance.