Infineon IKA15N65ET6: A High-Performance 650V Superjunction MOSFET for Efficient Power Conversion

Release date:2025-11-05 Number of clicks:61

Infineon IKA15N65ET6: A High-Performance 650V Superjunction MOSFET for Efficient Power Conversion

The relentless pursuit of higher efficiency and power density in modern electronics places immense demands on power switching devices. Addressing this need, the Infineon IKA15N65ET6 stands out as a benchmark 650V Superjunction MOSFET engineered to deliver superior performance in a wide array of power conversion applications.

At the core of this device is Infineon's advanced CoolMOS™ ET6 superjunction technology. This technology represents a significant leap forward from standard planar MOSFETs, enabling a drastically reduced figure of merit (RDS(on) x Qg). The result is a component that achieves an exceptional balance between the lowest possible conduction losses and minimal switching losses. With a maximum drain-source voltage (VDS) of 650V, it offers a robust safety margin for operation in universal mains applications, including those with demanding conditions like 230 VAC systems.

A key highlight of the IKA15N65ET6 is its remarkably low on-state resistance (RDS(on)) of just 0.15 Ω. This characteristic is paramount for enhancing efficiency, particularly at high load conditions, as it directly minimizes conduction losses and reduces heat generation. Complementing this is an optimized gate charge (Qg), which ensures swift switching transitions. Faster switching translates to lower switching losses, which is critical for achieving high efficiency at elevated frequencies. This combination allows designers to push the boundaries of power supply switching frequencies, leading to the development of smaller, more compact magnetic components and overall systems.

Furthermore, the device features an integrated fast body diode that provides excellent reverse recovery characteristics. This is vital for circuits like power factor correction (PFC) and half-bridge topologies, where the body diode's behavior directly impacts efficiency and electromagnetic interference (EMI). The robust technology and design also ensure high reliability and durability under harsh operating conditions.

The IKA15N65ET6 is ideally suited for a broad spectrum of high-efficiency switch-mode power supplies (SMPS), including server and telecommunication power units, industrial motor drives, solar inverters, and lighting ballasts. Its performance attributes make it a top-tier choice for designers aiming to meet stringent energy efficiency standards like 80 PLUS.

ICGOOODFIND: The Infineon IKA15N65ET6 is a premier 650V Superjunction MOSFET that sets a high standard for efficiency and reliability. Its exceptional blend of ultra-low RDS(on) and optimized switching characteristics, courtesy of the advanced CoolMOS™ ET6 technology, makes it an indispensable component for engineers designing next-generation, high-power-density conversion systems.

Keywords:

Superjunction MOSFET

High Efficiency

Low RDS(on)

CoolMOS™ ET6

Power Conversion

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