Infineon IPB120N04S402ATMA1 40V OptiMOS Power MOSFET for High-Efficiency Power Conversion

In the ever-evolving landscape of power electronics, achieving higher efficiency, power density, and reliability is paramount. The Infineon IPB120N04S402ATMA1, a 40V OptiMOS Power MOSFET, stands out as a premier solution engineered to meet these demanding challenges. This device is specifically designed to minimize power losses and maximize performance in a wide array of DC-DC conversion and motor control applications.

A key strength of this MOSFET lies in its exceptionally low figure-of-merit (RDS(on) x QG). With a maximum on-state resistance of just 1.2 mΩ, it significantly reduces conduction losses, allowing for more current to be delivered with less energy wasted as heat. This is crucial for improving the thermal performance and overall efficiency of power systems. Furthermore, its optimized gate charge ensures swift switching transitions, which directly translates to lower switching losses, especially in high-frequency applications such as switch-mode power supplies (SMPS) and synchronous rectification circuits.

The device is housed in the robust Infineon SMD (SuperSO8) package, which offers a superior thermal resistance compared to standard SO-8 packages. This advanced packaging technology enhances power dissipation capabilities, enabling higher power density designs without compromising reliability. The IPB120N04S402ATMA1 is also AEC-Q101 qualified, making it an excellent and reliable choice for demanding automotive environments, including engine control units, electric power steering, and battery management systems.

Designers will appreciate the enhanced immunity to gate oscillation and parasitic turn-on, a common challenge in fast-switching scenarios. This inherent robustness simplifies circuit layout and gate driving requirements, leading to more stable and reliable end-products. Whether it's used in server and telecom power supplies, industrial motor drives, or high-performance computing, this MOSFET provides a critical advantage in creating smaller, cooler, and more efficient power conversion systems.

ICGOOODFIND: The Infineon IPB120N04S402ATMA1 40V OptiMOS Power MOSFET is a top-tier component that sets a high standard for efficiency and power density. Its industry-leading low RDS(on), fast switching capability, and robust thermal performance make it an indispensable solution for next-generation power conversion designs across automotive, industrial, and computing applications.

Keywords: Power Efficiency, Low RDS(on), OptiMOS Technology, Synchronous Rectification, AEC-Q101 Qualified.